Infineon BFP740FH6327XTSA1 RF Bipolar Transistor, 45 mA NPN, 13 V, 4-Pin SOT-343
- RS庫存編號:
- 259-1450
- 製造零件編號:
- BFP740FH6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
TWD332.50
(不含稅)
TWD349.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 875 件從 2026年8月31日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD13.30 | TWD332.50 |
| 50 - 75 | TWD12.60 | TWD315.00 |
| 100 - 225 | TWD11.80 | TWD295.00 |
| 250 + | TWD11.50 | TWD287.50 |
* 參考價格
- RS庫存編號:
- 259-1450
- 製造零件編號:
- BFP740FH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 45mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Maximum Transition Frequency ft | 44GHz | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 160mW | |
| Minimum DC Current Gain hFE | 160 | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 1.4mm | |
| Height | 0.55mm | |
| Series | BFP | |
| Width | 0.8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 45mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Maximum Transition Frequency ft 44GHz | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 160mW | ||
Minimum DC Current Gain hFE 160 | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 1.4mm | ||
Height 0.55mm | ||
Series BFP | ||
Width 0.8mm | ||
Automotive Standard No | ||
The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT), It is wireless communications: WLAN, WiMax and UWB.
Low noise figure NFmin 0.85 dB at 5.5 GHz, 3 V, 6 mA
High gain Gms 19.5 dB at 5.5 GHz, 3 V, 15 mA
OIP3 24.5 dBm at 5.5 GHz, 3 V, 15 mA
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