Infineon Silicon Junction, Single, 80 A, 2-Pin 650 V TO-220

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TWD1,630.00

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TWD1,711.50

(含稅)

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每單位
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50 - 200TWD32.60TWD1,630.00
250 +TWD32.00TWD1,600.00

* 參考價格

RS庫存編號:
145-8760
製造零件編號:
IDP40E65D2XKSA1
製造商:
Infineon
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品牌

Infineon

Diode Configuration

Single

Product Type

Silicon Junction

Maximum Forward Current If

80A

Mount Type

Through Hole

Sub Type

Silicon Junction

Package Type

TO-220

Pin Count

2

Maximum Peak Reverse Repetitive Voltage Vrrm

650V

Peak Non-Repetitive Forward Surge Current Ifsm

250A

Peak Reverse Recovery Time trr

83ns

Maximum Power Dissipation Pd

200W

Minimum Operating Temperature

-40°C

Maximum Forward Voltage Vf

2.2V

Maximum Operating Temperature

175°C

Length

10.2mm

Height

15.95mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MY

Fast Switching Emitter Controlled Diodes, Infineon


The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.

Rapid 1 diode switches between 18kHz and 40kHz

1.35V temperature-stable forward voltage

Ideal for Power Factor Correction (PFC) topologies

The Rapid 2 diode switches between 40 kHz and 100 kHz

Low reverse recovery charge: forward voltage ratio for BiC performance

Low reverse recovery time

Low turn-on losses on the boost switch

Ultra-fast Diode 600 V/1200 V Emitter Controlled technology

Qualified according to JEDEC Standard

Good EMI behaviour

Low conduction losses

Easy paralleling

Diodes and Rectifiers, Infineon


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