Infineon Silicon Junction, Single, 80 A, 3-Pin 650 V TO-247 IDW80C65D2XKSA1

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TWD464.00

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TWD487.20

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  • 2026年10月28日 發貨
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每單位
每包*
5 - 5TWD92.80TWD464.00
10 - 10TWD90.60TWD453.00
15 +TWD89.00TWD445.00

* 參考價格

包裝方式:
RS庫存編號:
218-4384
製造零件編號:
IDW80C65D2XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Forward Current If

80A

Product Type

Silicon Junction

Diode Configuration

Single

Mount Type

Through Hole

Sub Type

Silicon Junction

Package Type

TO-247

Pin Count

3

Peak Reverse Recovery Time trr

36ns

Maximum Power Dissipation Pd

180W

Peak Non-Repetitive Forward Surge Current Ifsm

250A

Minimum Operating Temperature

-40°C

Maximum Forward Voltage Vf

1.6V

Maximum Peak Reverse Repetitive Voltage Vrrm

650V

Maximum Operating Temperature

175°C

Length

16.13mm

Series

IDW80C65D2

Standards/Approvals

JEDEC

Height

41.42mm

Automotive Standard

No

The Infineon Rapid 1 series switching emitter controller power silicon diode in common cathode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs. It is used in various applications like in telecom, UPS, welding, adapter, home appliance and air condition. It has forward current of 80 A.

1.35 V temperature-stable forward voltage

Highest softness-factor for ultimate softness and low EMI filtering

Low reverse recovery charge

Low reverse recovery current

For applications switching between 18 kHz and 40 kHz

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