Infineon Silicon Junction, Single, 75 A, 3-Pin 650 V TO-247
- RS庫存編號:
- 218-4378
- 製造零件編號:
- IDW75D65D1XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
TWD2,064.00
(不含稅)
TWD2,167.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 180 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD68.80 | TWD2,064.00 |
| 60 - 90 | TWD67.30 | TWD2,019.00 |
| 120 + | TWD62.60 | TWD1,878.00 |
* 參考價格
- RS庫存編號:
- 218-4378
- 製造零件編號:
- IDW75D65D1XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Silicon Junction | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 75A | |
| Sub Type | Silicon Junction | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 1.35V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 580A | |
| Maximum Power Dissipation Pd | 326W | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Peak Reverse Recovery Time trr | 108ns | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.13mm | |
| Standards/Approvals | RoHS | |
| Series | D75ED1 | |
| Height | 41.42mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Silicon Junction | ||
Diode Configuration Single | ||
Maximum Forward Current If 75A | ||
Sub Type Silicon Junction | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 1.35V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 580A | ||
Maximum Power Dissipation Pd 326W | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Peak Reverse Recovery Time trr 108ns | ||
Maximum Operating Temperature 175°C | ||
Length 16.13mm | ||
Standards/Approvals RoHS | ||
Series D75ED1 | ||
Height 41.42mm | ||
Automotive Standard No | ||
The Infineon Rapid 1 series switching emitter controller power silicon diode in dual anode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs. It is used in various applications like in telecom, UPS, welding, adapter, home appliance and air condition. It has forward current of 150 A.
1.35 V temperature-stable forward voltage
Highest softness-factor for ultimate softness and low EMI filtering
Low reverse recovery charge
Low reverse recovery current
For applications switching between 18 kHz and 40 kHz
相關連結
- Infineon Silicon Junction 75 A, 3-Pin 650 V TO-247 IDW75D65D1XKSA1
- Infineon Silicon Junction 40 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 30 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 60 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 15 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247 IDW80C65D2XKSA1
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247 IDW40E65D2FKSA1