Infineon Silicon Junction, Single, 15 A, 3-Pin 650 V TO-247 IDW15E65D2FKSA1
- RS庫存編號:
- 218-4369
- 製造零件編號:
- IDW15E65D2FKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（30 件, 每管30個）*
TWD1,638.00
(不含稅)
TWD1,719.90
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 240 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD54.60 | TWD1,638.00 |
| 60 - 90 | TWD53.50 | TWD1,605.00 |
| 120 + | TWD51.80 | TWD1,554.00 |
* 參考價格
- RS庫存編號:
- 218-4369
- 製造零件編號:
- IDW15E65D2FKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Silicon Junction | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 15A | |
| Sub Type | Silicon Junction | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 1.6V | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 85.7W | |
| Peak Reverse Recovery Time trr | 30ns | |
| Maximum Operating Temperature | 175°C | |
| Height | 41.42mm | |
| Series | IDW15E65D2 | |
| Width | 5.21mm | |
| Standards/Approvals | RoHS | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Silicon Junction | ||
Diode Configuration Single | ||
Maximum Forward Current If 15A | ||
Sub Type Silicon Junction | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 1.6V | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 100A | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 85.7W | ||
Peak Reverse Recovery Time trr 30ns | ||
Maximum Operating Temperature 175°C | ||
Height 41.42mm | ||
Series IDW15E65D2 | ||
Width 5.21mm | ||
Standards/Approvals RoHS | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon Rapid 2 series switching emitter controller power silicon diode in a TO-247 package is designed for applications switching between 40 kHz and 100 kHz. It has forward current of 30 A.
Lowest reverse recovery charge
Low reverse recovery time
Lowest reverse recovery current to provide lowest turn-on losses on the boost switch
Pb-free lead plating
RoHS compliant
相關連結
- Infineon Silicon Junction 15 A, 3-Pin 650 V TO-247 IDW15E65D2FKSA1
- Infineon Silicon Junction 60 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 40 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 30 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 75 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247 IDW80C65D2XKSA1
- Infineon Silicon Junction 40 A, 3-Pin 650 V TO-247 IDFW40E65D1EXKSA1