Infineon Silicon Junction, Single, 80 A, 3-Pin 650 V TO-247
- RS庫存編號:
- 914-0214
- Distrelec 貨號:
- 304-37-845
- 製造零件編號:
- IDW40E65D2FKSA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 6 件)*
TWD504.00
(不含稅)
TWD529.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 228 件從 2026年5月04日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 6 - 6 | TWD84.00 | TWD504.00 |
| 12 - 12 | TWD82.00 | TWD492.00 |
| 18 + | TWD76.70 | TWD460.20 |
* 參考價格
- RS庫存編號:
- 914-0214
- Distrelec 貨號:
- 304-37-845
- 製造零件編號:
- IDW40E65D2FKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Silicon Junction | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 80A | |
| Sub Type | Silicon Junction | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 250A | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Recovery Time trr | 83ns | |
| Maximum Power Dissipation Pd | 180W | |
| Maximum Forward Voltage Vf | 2.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 21.1mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Silicon Junction | ||
Diode Configuration Single | ||
Maximum Forward Current If 80A | ||
Sub Type Silicon Junction | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 250A | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Recovery Time trr 83ns | ||
Maximum Power Dissipation Pd 180W | ||
Maximum Forward Voltage Vf 2.3V | ||
Maximum Operating Temperature 175°C | ||
Height 21.1mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Automotive Standard No | ||
Fast Switching Emitter Controlled Diodes, Infineon
The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.
Rapid 1 diode switches between 18kHz and 40kHz
1.35V temperature-stable forward voltage
Ideal for Power Factor Correction (PFC) topologies
The Rapid 2 diode switches between 40 kHz and 100 kHz
Low reverse recovery charge: forward voltage ratio for BiC performance
Low reverse recovery time
Low turn-on losses on the boost switch
Ultra-fast Diode 600 V/1200 V Emitter Controlled technology
Qualified according to JEDEC Standard
Good EMI behaviour
Low conduction losses
Easy paralleling
Diodes and Rectifiers, Infineon
相關連結
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247 IDW40E65D2FKSA1
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247 IDW80C65D2XKSA1
- Infineon Silicon Junction 60 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 15 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 30 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 75 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 40 A, 3-Pin 650 V TO-247
