Infineon SRAM, CY62148ELL-45ZSXI- 4 MB
- RS庫存編號:
- 273-7340
- 製造零件編號:
- CY62148ELL-45ZSXI
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 托盤，共 117 件）*
TWD15,912.00
(不含稅)
TWD16,707.60
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每托盤* |
|---|---|---|
| 117 + | TWD136.00 | TWD15,912.00 |
* 參考價格
- RS庫存編號:
- 273-7340
- 製造零件編號:
- CY62148ELL-45ZSXI
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | SRAM | |
| Memory Size | 4MB | |
| Organisation | 512k x 8 | |
| Number of Words | 512K | |
| Number of Bits per Word | 8 | |
| Maximum Random Access Time | 45ns | |
| Address Bus Width | 19bit | |
| Minimum Supply Voltage | 0.5V | |
| Timing Type | Asynchronous | |
| Maximum Supply Voltage | 6V | |
| Package Type | SOIC | |
| Minimum Operating Temperature | 65°C | |
| Pin Count | 32 | |
| Maximum Operating Temperature | 150°C | |
| Length | 20.95mm | |
| Height | 1mm | |
| Width | 11.76 mm | |
| Standards/Approvals | RoHS | |
| Series | MoBL | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type SRAM | ||
Memory Size 4MB | ||
Organisation 512k x 8 | ||
Number of Words 512K | ||
Number of Bits per Word 8 | ||
Maximum Random Access Time 45ns | ||
Address Bus Width 19bit | ||
Minimum Supply Voltage 0.5V | ||
Timing Type Asynchronous | ||
Maximum Supply Voltage 6V | ||
Package Type SOIC | ||
Minimum Operating Temperature 65°C | ||
Pin Count 32 | ||
Maximum Operating Temperature 150°C | ||
Length 20.95mm | ||
Height 1mm | ||
Width 11.76 mm | ||
Standards/Approvals RoHS | ||
Series MoBL | ||
Automotive Standard No | ||
The Infineon Static RAM is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low standby current. This ideal for providing more battery life in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99 percent when deselected.
Very high speed
Ultra low standby power
Easy memory expansion
CMOS for optimum speed and power
Automatic power down when deselected