Infineon SRAM, CY62148EV30LL-45ZSXI- 4 MB
- RS庫存編號:
- 273-7342
- 製造零件編號:
- CY62148EV30LL-45ZSXI
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 托盤，共 117 件）*
TWD12,905.10
(不含稅)
TWD13,550.94
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月09日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 117 - 234 | TWD110.30 | TWD12,905.10 |
| 351 + | TWD106.80 | TWD12,495.60 |
* 參考價格
- RS庫存編號:
- 273-7342
- 製造零件編號:
- CY62148EV30LL-45ZSXI
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | SRAM | |
| Memory Size | 4MB | |
| Organisation | 512k x 8 | |
| Number of Words | 512K | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 0.3V | |
| Maximum Supply Voltage | 0.3V | |
| Mount Type | Surface | |
| Package Type | TSOP II | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Pin Count | 32 | |
| Standards/Approvals | RoHS | |
| Series | CY62148EV30 | |
| Width | 1.2 mm | |
| Length | 20.82mm | |
| Height | 11.96mm | |
| Supply Current | 20mA | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type SRAM | ||
Memory Size 4MB | ||
Organisation 512k x 8 | ||
Number of Words 512K | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 0.3V | ||
Maximum Supply Voltage 0.3V | ||
Mount Type Surface | ||
Package Type TSOP II | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Pin Count 32 | ||
Standards/Approvals RoHS | ||
Series CY62148EV30 | ||
Width 1.2 mm | ||
Length 20.82mm | ||
Height 11.96mm | ||
Supply Current 20mA | ||
Automotive Standard No | ||
The Infineon Static RAM is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This ideal for providing more battery life in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. The device can also be put into standby mode reducing power consumption by more than 99 percent when deselected.
Very high speed
Ultra low standby power
Easy memory expansion
CMOS for optimum speed and power
Automatic power down when deselected