Infineon SRAM, CY62126EV30LL-45ZSXI- 1 MB
- RS庫存編號:
- 273-7330
- 製造零件編號:
- CY62126EV30LL-45ZSXI
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 托盤，共 135 件）*
TWD6,493.50
(不含稅)
TWD6,817.50
(含稅)
添加 135 件 件可免費送貨
暫時缺貨
- 從 2026年6月09日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 135 - 405 | TWD48.10 | TWD6,493.50 |
| 540 + | TWD46.60 | TWD6,291.00 |
* 參考價格
- RS庫存編號:
- 273-7330
- 製造零件編號:
- CY62126EV30LL-45ZSXI
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | SRAM | |
| Memory Size | 1MB | |
| Organisation | 64 K x 16 | |
| Number of Words | 64K | |
| Number of Bits per Word | 16 | |
| Minimum Supply Voltage | 0.3V | |
| Maximum Supply Voltage | 3.6V | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Package Type | TSOP II | |
| Pin Count | 44 | |
| Maximum Operating Temperature | 85°C | |
| Width | 1.19 mm | |
| Length | 18.51mm | |
| Height | 10.26mm | |
| Standards/Approvals | RoHS | |
| Series | CY62126EV30 | |
| Supply Current | 35mA | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type SRAM | ||
Memory Size 1MB | ||
Organisation 64 K x 16 | ||
Number of Words 64K | ||
Number of Bits per Word 16 | ||
Minimum Supply Voltage 0.3V | ||
Maximum Supply Voltage 3.6V | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Package Type TSOP II | ||
Pin Count 44 | ||
Maximum Operating Temperature 85°C | ||
Width 1.19 mm | ||
Length 18.51mm | ||
Height 10.26mm | ||
Standards/Approvals RoHS | ||
Series CY62126EV30 | ||
Supply Current 35mA | ||
The Infineon Static RAM is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing more battery life in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device in standby mode reduces power consumption by more than 99 percent when deselected.
High speed
Ultra low active power
Easy memory expansion
CMOS for optimum speed and power
Automatic power down when deselected