Infineon SRAM, CY62147EV30LL-45ZSXI- 4 MB
- RS庫存編號:
- 273-7338
- 製造零件編號:
- CY62147EV30LL-45ZSXI
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 托盤,共 135 件)*
TWD13,959.00
(不含稅)
TWD14,656.95
(含稅)
添加 135 件 件可免費送貨
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- 1,215 件準備從其他地點送貨
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單位 | 每單位 | 每托盤* |
|---|---|---|
| 135 - 135 | TWD103.40 | TWD13,959.00 |
| 270 + | TWD100.70 | TWD13,594.50 |
* 參考價格
- RS庫存編號:
- 273-7338
- 製造零件編號:
- CY62147EV30LL-45ZSXI
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 4MB | |
| Product Type | SRAM | |
| Organisation | 256k x 16 | |
| Number of Words | 256K | |
| Number of Bits per Word | 16 | |
| Minimum Supply Voltage | 0.3V | |
| Maximum Supply Voltage | 3.9V | |
| Mount Type | Surface | |
| Package Type | TSOP II | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Pin Count | 44 | |
| Height | 10.26mm | |
| Length | 18.51mm | |
| Width | 1.19 mm | |
| Standards/Approvals | RoHS | |
| Series | CY62147EV30 | |
| Automotive Standard | No | |
| Supply Current | 20mA | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 4MB | ||
Product Type SRAM | ||
Organisation 256k x 16 | ||
Number of Words 256K | ||
Number of Bits per Word 16 | ||
Minimum Supply Voltage 0.3V | ||
Maximum Supply Voltage 3.9V | ||
Mount Type Surface | ||
Package Type TSOP II | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Pin Count 44 | ||
Height 10.26mm | ||
Length 18.51mm | ||
Width 1.19 mm | ||
Standards/Approvals RoHS | ||
Series CY62147EV30 | ||
Automotive Standard No | ||
Supply Current 20mA | ||
The Infineon Static RAM is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. Ultra low active current is ideal for providing more battery life in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99 percent when deselected.
Very high speed
Ultra low active power
Easy memory expansion
Byte power down feature
CMOS for optimum speed and power
Automatic power down when deselected
