可享批量折扣
小計（1 包，共 2 件）*
TWD108.00
(不含稅)
TWD113.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 76 件從 2026年3月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD54.00 | TWD108.00 |
| 10 - 18 | TWD53.00 | TWD106.00 |
| 20 - 48 | TWD50.50 | TWD101.00 |
| 50 - 98 | TWD49.50 | TWD99.00 |
| 100 + | TWD48.50 | TWD97.00 |
* 參考價格
- RS庫存編號:
- 273-7331
- 製造零件編號:
- CY62126EV30LL-45ZSXI
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 1MB | |
| Product Type | SRAM | |
| Organisation | 64 K x 16 | |
| Number of Words | 64K | |
| Number of Bits per Word | 16 | |
| Minimum Supply Voltage | 0.3V | |
| Mount Type | Surface | |
| Maximum Supply Voltage | 3.6V | |
| Package Type | TSOP II | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 44 | |
| Maximum Operating Temperature | 85°C | |
| Length | 18.51mm | |
| Width | 1.19 mm | |
| Series | CY62126EV30 | |
| Standards/Approvals | RoHS | |
| Height | 10.26mm | |
| Supply Current | 35mA | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 1MB | ||
Product Type SRAM | ||
Organisation 64 K x 16 | ||
Number of Words 64K | ||
Number of Bits per Word 16 | ||
Minimum Supply Voltage 0.3V | ||
Mount Type Surface | ||
Maximum Supply Voltage 3.6V | ||
Package Type TSOP II | ||
Minimum Operating Temperature -40°C | ||
Pin Count 44 | ||
Maximum Operating Temperature 85°C | ||
Length 18.51mm | ||
Width 1.19 mm | ||
Series CY62126EV30 | ||
Standards/Approvals RoHS | ||
Height 10.26mm | ||
Supply Current 35mA | ||
The Infineon Static RAM is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing more battery life in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device in standby mode reduces power consumption by more than 99 percent when deselected.
High speed
Ultra low active power
Easy memory expansion
CMOS for optimum speed and power
Automatic power down when deselected