Infineon SRAM, CY62148ELL-55SXI- 4 MB
- RS庫存編號:
- 124-2941
- 製造零件編號:
- CY62148ELL-55SXI
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD485.00
(不含稅)
TWD509.24
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 112 件從 2026年3月30日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 4 | TWD242.50 | TWD485.00 |
| 6 - 10 | TWD237.00 | TWD474.00 |
| 12 + | TWD232.00 | TWD464.00 |
* 參考價格
- RS庫存編號:
- 124-2941
- 製造零件編號:
- CY62148ELL-55SXI
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 4MB | |
| Product Type | SRAM | |
| Organisation | 512 k x 8 Bit | |
| Number of Words | 512K | |
| Number of Bits per Word | 8 | |
| Maximum Random Access Time | 45ns | |
| Address Bus Width | 8bit | |
| Maximum Clock Frequency | 1MHz | |
| Timing Type | Asynchronous | |
| Minimum Supply Voltage | 4.5V | |
| Mount Type | Surface | |
| Maximum Supply Voltage | 5.5V | |
| Package Type | SOIC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Pin Count | 32 | |
| Height | 2.81mm | |
| Length | 20.75mm | |
| Series | CY62148E | |
| Width | 11.43 mm | |
| Standards/Approvals | No | |
| Supply Current | 20mA | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 4MB | ||
Product Type SRAM | ||
Organisation 512 k x 8 Bit | ||
Number of Words 512K | ||
Number of Bits per Word 8 | ||
Maximum Random Access Time 45ns | ||
Address Bus Width 8bit | ||
Maximum Clock Frequency 1MHz | ||
Timing Type Asynchronous | ||
Minimum Supply Voltage 4.5V | ||
Mount Type Surface | ||
Maximum Supply Voltage 5.5V | ||
Package Type SOIC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Pin Count 32 | ||
Height 2.81mm | ||
Length 20.75mm | ||
Series CY62148E | ||
Width 11.43 mm | ||
Standards/Approvals No | ||
Supply Current 20mA | ||
Automotive Standard No | ||
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.