N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXYS IXFH30N50Q3

RS庫存編號:: 920-0965
製造零件編號:: IXFH30N50Q3
製造商:: IXYS

N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXYS IXFH30N50Q3

可供預購。

單價（不含稅）毎管：30 個

TWD364.00

(不含稅)

TWD382.20

單位	每單位	Per Tube*
30 - 30	TWD364.00	TWD10,920.00
60 - 90	TWD356.10	TWD10,683.00
120 +	TWD348.20	TWD10,446.00

* 參考價格

RS庫存編號:: 920-0965
製造零件編號:: IXFH30N50Q3
製造商:: IXYS

產品概覽和技術數據資料表

法例與合規

COO (Country of Origin):: US

產品詳細資訊

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

規格

屬性	值
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	500 V
Series	HiperFET, Q-Class
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	690 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Typical Gate Charge @ Vgs	62 nC @ 10 V
Length	16.26mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	5.3mm
Height	16.26mm
Minimum Operating Temperature	-55 °C