IXYS Type N-Channel MOSFET, 50 A, 600 V Enhancement, 3-Pin TO-247 IXFH50N60P3
- RS庫存編號:
- 802-4388
- 製造零件編號:
- IXFH50N60P3
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 件）*
TWD356.00
(不含稅)
TWD373.80
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 加上 6 件從 2026年1月26日 起發貨
- 最終 7 件從 2026年2月02日 起發貨
單位 | 每單位 |
|---|---|
| 1 + | TWD356.00 |
* 參考價格
- RS庫存編號:
- 802-4388
- 製造零件編號:
- IXFH50N60P3
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 145mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.04kW | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.3 mm | |
| Length | 16.26mm | |
| Height | 21.46mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 145mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.04kW | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Width 5.3 mm | ||
Length 16.26mm | ||
Height 21.46mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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