IXYS HiperFET, Q3-Class Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-264

RS庫存編號:: 920-0978
製造零件編號:: IXFK48N60Q3
製造商:: IXYS

IXYS HiperFET, Q3-Class Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-264

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可享批量折扣

小計（1 管，共 25 件）*

TWD14,565.00

(不含稅)

TWD15,293.25

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單位	每單位	每管*
25 - 100	TWD582.60	TWD14,565.00
125 +	TWD524.40	TWD13,110.00

* 參考價格

RS庫存編號:: 920-0978
製造零件編號:: IXFK48N60Q3
製造商:: IXYS

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產品詳細資訊

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選取全部	屬性	值
	品牌	IXYS
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	48A
	Maximum Drain Source Voltage Vds	600V
	Series	HiperFET, Q3-Class
	Package Type	TO-264
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	140mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	140nC
	Forward Voltage Vf	1.4V
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	1kW
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	19.96mm
	Width	5.13 mm
	Height	26.16mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 IXYS
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 48A
	Maximum Drain Source Voltage Vds 600V
	Series HiperFET, Q3-Class
	Package Type TO-264
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 140mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 140nC
	Forward Voltage Vf 1.4V
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 1kW
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 19.96mm
	Width 5.13 mm
	Height 26.16mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

IXYS HiperFET, Q3-Class Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-264

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

MOSFET Transistors, IXYS

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