IXYS HiperFET, Q3-Class Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-264 IXFK48N60Q3
- RS庫存編號:
- 801-1415
- 製造零件編號:
- IXFK48N60Q3
- 製造商:
- IXYS
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小計（1 件）*
TWD882.00
(不含稅)
TWD926.10
(含稅)
訂單超過 $1,300.00 免費送貨
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- 從 2026年12月11日 發貨
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單位 | 每單位 |
|---|---|
| 1 + | TWD882.00 |
* 參考價格
- RS庫存編號:
- 801-1415
- 製造零件編號:
- IXFK48N60Q3
- 製造商:
- IXYS
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | HiperFET, Q3-Class | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Power Dissipation Pd | 1kW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 19.96mm | |
| Width | 5.13 mm | |
| Height | 26.16mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series HiperFET, Q3-Class | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Power Dissipation Pd 1kW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 19.96mm | ||
Width 5.13 mm | ||
Height 26.16mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS