IXYS HiperFET, Q3-Class Type N-Channel MOSFET, 30 A, 500 V Enhancement, 3-Pin TO-247 IXFH30N50Q3

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包裝方式：
RS庫存編號:
801-1386
Distrelec 貨號:
302-53-319
製造零件編號:
IXFH30N50Q3
製造商:
IXYS
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品牌

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

500V

Series

HiperFET, Q3-Class

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

200mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.4V

Typical Gate Charge Qg @ Vgs

62nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

690W

Maximum Operating Temperature

150°C

Height

16.26mm

Width

5.3 mm

Length

16.26mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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