Infineon HEXFET Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-220

RS庫存編號:: 919-4898
製造零件編號:: IRLZ34NPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-220

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可享批量折扣

小計（1 管，共 50 件）*

TWD1,135.00

(不含稅)

TWD1,192.00

訂單超過 $1,300.00 免費送貨

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加上 50 件從 2026年1月28日起發貨
加上 2,000 件從 2026年7月02日起發貨

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單位	每單位	每管*
50 - 50	TWD22.70	TWD1,135.00
100 - 150	TWD22.20	TWD1,110.00
200 +	TWD20.60	TWD1,030.00

* 參考價格

RS庫存編號:: 919-4898
製造零件編號:: IRLZ34NPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	35mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	25nC
	Maximum Power Dissipation Pd	68W
	Maximum Gate Source Voltage Vgs	16 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	4.69 mm
	Height	8.77mm
	Length	10.54mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 35mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 25nC
	Maximum Power Dissipation Pd 68W
	Maximum Gate Source Voltage Vgs 16 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 4.69 mm
	Height 8.77mm
	Length 10.54mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NPBF

This high-performance N-channel MOSFET is designed for efficiency in various electronic applications. It has a maximum continuous drain current of 30A and can handle drain-source voltages of up to 55V. The enhanced mode capability ensures operation under various conditions, making it a valuable component for power management across different sectors.

Features & Benefits

• Low on-resistance of 35mΩ reduces power loss

• High power dissipation capability of 68W enhances performance

• Operating temperature range from -55°C to +175°C ensures versatility

• Typical gate charge of 25nC at 5V enables faster switching

• Compact TO-220AB package enables efficient PCB layout

Applications

• Utilised in DC-DC converters for efficient power conversion

• Appropriate for motor driver circuits in industrial automation

• Effective in power management systems for renewable energy

• Used in high-speed switching for telecommunications

What is the maximum gate-source voltage?

The device can withstand a maximum gate-source voltage of ±16V, ensuring safe operation in various circuits.

How does temperature affect its performance?

The MOSFET operates efficiently across a temperature range from -55°C to +175°C, maintaining stability in extreme conditions.

Can it be used in high-frequency applications?

Yes, it is designed with a typical gate charge of 25nC at 5V, making it suitable for high-frequency applications such as RF amplifiers.

What are the implications of low Rds(on)?

A lower Rds(on) value significantly reduces heat generation and power losses, improving overall efficiency in power supply designs.

Is it compatible with various electronic circuits?

This device is versatile and can be integrated into different circuit configurations, including automotive and industrial power electronics.