Infineon HEXFET N-Channel MOSFET, 49 A, 55 V, 3-Pin TO-220AB IRFZ44NPBF
- RS庫存編號:
- 919-4769
- 製造零件編號:
- IRFZ44NPBF
- 製造商:
- Infineon
可享批量折扣
單價 毎管：50 個**
TWD24.50
(不含稅)
TWD25.72
(含稅)
當前暫無庫存，可於03/05/2025發貨，6 工作日送達。*
* 交貨日期可能會根據您選擇的數量和交貨地址而變更。
訂單金額滿 TWD1,300.00 (未稅) 即可享受 免費 送貨服務
單位 | 每單位 | 每管** |
|---|---|---|
| 50 - 50 | TWD24.50 | TWD1,225.00 |
| 100 - 150 | TWD24.00 | TWD1,200.00 |
| 200 + | TWD22.30 | TWD1,115.00 |
** 參考價格
- RS庫存編號:
- 919-4769
- 製造零件編號:
- IRFZ44NPBF
- 製造商:
- Infineon
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 49A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRFZ44NPBF
This MOSFET is designed for performance in automation, electronics, and electrical engineering applications. It can manage high current levels with low resistance, enhancing the efficiency of electronic circuits. With HEXFET technology, the device offers improved reliability and effectiveness in various environments.
Features & Benefits
• Utilises enhancement mode for responsive control
• Low resistance of 17.5mΩ for effective power management
• Fast switching speeds for improved system performance
• Low resistance of 17.5mΩ for effective power management
• Fast switching speeds for improved system performance
Applications
• Suitable for DC-DC converters
• Motor drives and control systems
• Renewable energy systems, such as solar inverters
• Motor drives and control systems
• Renewable energy systems, such as solar inverters
What impact does the low resistance have on performance?
The low on-resistance of 17.5mΩ enhances efficiency by minimising energy losses during operation, which is advantageous in high-current circuits.
How does temperature affect the continuous drain current?
Continuous drain current is rated at 49A at 25°C and decreases to 35A at 100°C, ensuring safe usage in varying environments.
Can this component handle repetitive avalanche conditions?
Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of up to 25A and an avalanche energy of 9.4mJ, providing additional durability.
What type of applications benefit most from using this MOSFET?
This component is particularly useful in high-power applications, including industrial automation controls and automotive systems requiring efficient energy conversion.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 49 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | TO-220AB |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 17.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 94 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 8.77mm |