Infineon HEXFET Type N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-220

RS庫存編號:: 919-4766
製造零件編號:: IRFZ34NPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-220

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 50 件）*

TWD615.00

(不含稅)

TWD646.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

250 件從 2026年1月26日起裝運發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
50 - 50	TWD12.30	TWD615.00
100 - 150	TWD12.10	TWD605.00
200 +	TWD11.20	TWD560.00

* 參考價格

RS庫存編號:: 919-4766
製造零件編號:: IRFZ34NPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	34nC
	Forward Voltage Vf	1.6V
	Maximum Power Dissipation Pd	68W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Width	4.4 mm
	Standards/Approvals	No
	Height	8.77mm
	Length	10.54mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 34nC
	Forward Voltage Vf 1.6V
	Maximum Power Dissipation Pd 68W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Width 4.4 mm
	Standards/Approvals No
	Height 8.77mm
	Length 10.54mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 29A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRFZ34NPBF

This MOSFET is tailored for advanced electronic applications, particularly where high efficiency and dependability are essential. Its N-channel configuration facilitates efficient switching and modulation of electrical currents in power systems. With a maximum drain-source voltage of 55V and a continuous drain current of 29A, this component is crucial for high-performance designs in the automation and electrical sectors.

Features & Benefits

• Ultra-low on-resistance for minimal power loss

• Maximum power dissipation of 68W for robust functionality

• High-temperature tolerance of up to 175°C ensures long-term performance

• Compatible with through-hole mounting for easy integration

• Dynamic dv/dt rating allows for fast switching applications

• Enhancement mode transistor improves device efficiency

Applications

• Utilised in power supply designs for effective energy management

• Employed in motor control for accurate speed regulation

• Suitable for discrete switching in consumer electronics

• Applied in industrial automation to enhance system dependability

• Appropriate for automotive requiring high power handling

What is the maximum continuous drain current at 100°C?

At 100°C, the continuous drain current is rated at 20A, ensuring dependability in high-temperature conditions.

How does the low on-resistance benefit circuit efficiency?

A low RDS(on) decreases power losses during operation, which increases overall circuit efficiency and minimises heat generation.

Can it be used for parallel configurations?

Yes, the design accommodates easy paralleling, enhancing current handling for high-power applications.

What are the implications of the maximum gate-source voltage?

The maximum gate-source voltage of ±20V ensures safe operation and protects against damage during standard switching activities.

What is the impact of temperature on performance?

With an operating temperature range from -55°C to +175°C, it maintains operational integrity in extreme conditions, making it suitable for a variety of applications.