Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V Enhancement, 3-Pin TO-220

RS庫存編號:: 919-4804
製造零件編號:: IRL3705NPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V Enhancement, 3-Pin TO-220

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 50 件）*

TWD2,490.00

(不含稅)

TWD2,614.50

訂單超過 $1,300.00 免費送貨

有庫存

900 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
50 - 50	TWD49.80	TWD2,490.00
100 - 150	TWD48.70	TWD2,435.00
200 +	TWD47.60	TWD2,380.00

* 參考價格

RS庫存編號:: 919-4804
製造零件編號:: IRL3705NPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	89A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	10mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	98nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	170W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.67mm
	Height	9.02mm
	Width	4.69 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 89A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 10mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 98nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 170W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.67mm
	Height 9.02mm
	Width 4.69 mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRL3705NPBF

This N-channel MOSFET is engineered for high-performance applications, while providing enhanced efficiency and reliability. Utilising advanced HEXFET technology, it boasts minimal on-resistance and is suitable for various automation, electronics, and electrical applications. The device operates across a wide temperature range, ensuring effective performance in diverse environments.

Features & Benefits

• Low Rds(on) of 10mΩ for increased efficiency

• Operates in enhancement mode for innovative circuit designs

• Fast switching capabilities for improved system responsiveness

• Fully avalanche rated for durability in demanding situations

Applications

• Suitable for industrial power management systems

• Ideal for motor drive in automation

• Compatible with power supplies that require low thermal resistance

• Utilised in DC-DC converters for enhanced energy efficiency

What is the maximum power dissipation capability?

The maximum power dissipation is rated at 170W, facilitating effective thermal management under high load conditions.

Is it suitable for high temperatures?

This device can function within a temperature range of -55°C to +175°C, making it suitable for a variety of high-temperature scenarios.

What is the significance of the gate threshold voltage range?

The gate threshold voltage ranges from 1V to 2V, which is essential for determining the on/off states across various gate drive voltages.

What considerations are there for using this in a circuit?

Ensure that the gate-to-source voltage does not exceed ±16V to prevent damage and maintain optimal functionality.