Infineon LogicFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 919-4889
- 製造零件編號:
- IRL530NPBF
- 製造商:
- Infineon
可享批量折扣
小計（1 管，共 50 件）*
TWD1,720.00
(不含稅)
TWD1,806.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD34.40 | TWD1,720.00 |
| 100 - 150 | TWD33.70 | TWD1,685.00 |
| 200 + | TWD32.90 | TWD1,645.00 |
* 參考價格
- RS庫存編號:
- 919-4889
- 製造零件編號:
- IRL530NPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | LogicFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 79W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Width | 4.69 mm | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series LogicFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 79W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Width 4.69 mm | ||
Height 8.77mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
相關連結
- Infineon LogicFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRL530NPBF
- Infineon LogicFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon LogicFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRL520NPBF
- Infineon LogicFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220 IRL1004PBF
- Infineon LogicFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220AB
- Infineon LogicFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220AB IRL3803PBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220