Infineon Single LogicFET 1 N-Channel MOSFET, 104 A, 55 V Enhancement, 3-Pin TO-220AB IRL2505PBF
- RS庫存編號:
- 913-3869
- 製造零件編號:
- IRL2505PBF
- 製造商:
- Infineon
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- RS庫存編號:
- 913-3869
- 製造零件編號:
- IRL2505PBF
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Transistor Configuration | Single | |
| Series | LogicFET | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 104 A | |
| Maximum Drain Source Voltage (Vds) | 55 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-220AB | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.3 V | |
| Height | 8.77 mm | |
| Length | 10.54 mm | |
| Maximum Drain Source Resistance (Rds) | 8 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -16 V, +16 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 200 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole, Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 130 nC | |
| Width | 4.69 mm | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Transistor Configuration Single | ||
Series LogicFET | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 104 A | ||
Maximum Drain Source Voltage (Vds) 55 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-220AB | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.3 V | ||
Height 8.77 mm | ||
Length 10.54 mm | ||
Maximum Drain Source Resistance (Rds) 8 mΩ | ||
Maximum Gate Source Voltage (Vgs) -16 V, +16 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 200 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole, Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 130 nC | ||
Width 4.69 mm | ||
- COO (Country of Origin):
- CN
Infineon LogicFET Series MOSFET, 104A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL2505PBF
This MOSFET is designed for high-performance applications that require efficient energy management. With a maximum continuous drain current of 104A and a drain-source voltage capability of up to 55V, it is a competitive option for the market. Its robust construction and Advanced specifications make it suitable for various automation and electronic applications.
Features & Benefits
• Low on-resistance of 8mΩ reduces heat generation
• Maximum power dissipation of 200 W enhances performance
• Through-hole mounting style allows for easier integration
• Low gate charge requirement improves operational efficiency
• Enhancement mode design ensures performance in challenging conditions
Applications
• Power switching for effective control
• Motor driving circuits for speed and torque regulation
• Automated systems requiring high current management
• Power supplies and conversion circuits to maintain stable output
• Industrial machinery for enhanced power handling
What is the gate threshold voltage for use?
The gate threshold voltage is between 1V and 2V, providing flexibility for various applications.
How does temperature affect performance?
This device can operate effectively within a temperature range of -55°C to +175°C, making it suitable for harsh environmental conditions.
Can it handle pulsed current operations?
Yes, it can manage pulsed drain currents up to 360A, ensuring reliability during short-duration applications.
What level of voltage can be managed across the drain-source?
It supports a maximum voltage of 55V, which is Ideal for most general-purpose applications.
Is specific handling required during installation?
Standard precautions should be observed, such as avoiding excessive heat during soldering and maintaining a suitable operating environment to ensure longevity.
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