Infineon LogicFET Type N-Channel MOSFET, 130 A, 40 V Enhancement, 3-Pin TO-220

RS庫存編號:: 919-4943
製造零件編號:: IRL1004PBF
製造商:: Infineon

Infineon LogicFET Type N-Channel MOSFET, 130 A, 40 V Enhancement, 3-Pin TO-220

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 50 件）*

TWD2,740.00

(不含稅)

TWD2,877.00

訂單超過 $1,300.00 免費送貨

有庫存

400 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
50 - 50	TWD54.80	TWD2,740.00
100 - 150	TWD53.60	TWD2,680.00
200 +	TWD52.40	TWD2,620.00

* 參考價格

RS庫存編號:: 919-4943
製造零件編號:: IRL1004PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	130A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-220
	Series	LogicFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	7mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	100nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	200W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Standards/Approvals	No
	Width	4.69 mm
	Length	10.54mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 130A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-220
	Series LogicFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 7mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 100nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 200W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Standards/Approvals No
	Width 4.69 mm
	Length 10.54mm
	Automotive Standard No

登入下載 CAD 模型

COO (Country of Origin):: CN

Infineon LogicFET Series MOSFET, 130A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL1004PBF

This high-performance MOSFET employs Si technology and is designed for efficient power management in a variety of electronic applications. The enhancement mode N-channel structure ensures effective operation, making it suitable for modern automation and electrical systems, particularly in high power circuits.

Features & Benefits

• Continuous drain current capacity of up to 130A

• Maximum drain-source voltage of 40V ensuring robust performance

• Low Rds(on) of 7mΩ to decrease heat generation

• High thermal stability with a maximum operating temperature of +175°C

• Compact TO-220AB package allows for versatile mounting options

Applications

• High-efficiency power supply circuits

• Automotive and industrial automation systems

• Energy management and conversion systems

How does the Rds(on) contribute to the efficiency of the device?

A low Rds(on) of 7mΩ minimises power losses during operation, thereby reducing heat and enhancing overall efficiency in power applications.

What is the significance of the operating temperature range?

The device is capable of functioning within a wide temperature range of -55°C to +175°C, ensuring dependable performance across diverse environmental conditions and minimising the risk of thermal failure.

Can it be used for high-frequency switching applications?

Yes, it is designed for fast switching capabilities, making it suitable for high-frequency operations, thus improving performance in communication and control systems.

What considerations should be taken for installation?

Utilise appropriate thermal management techniques, such as a suitable heatsink, as high-power devices need effective heat dissipation to maintain functionality and reliability.

What happens if the gate-source voltage exceeds the maximum rating?

Exceeding the maximum gate-source voltage may result in device failure, so it is vital to adhere to the specified limits to ensure longevity and prevent damage.