Infineon OptiMOS 5 Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD025N06NATMA1

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包裝方式:
RS庫存編號:
906-4485
製造零件編號:
IPD025N06NATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

OptiMOS 5

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

167W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

71nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.73mm

Height

2.41mm

Automotive Standard

No

豁免

Infineon OptiMOS 5 Series MOSFET, 60V Maximum Drain Source Voltage, 90A Maximum Continuous Drain Current - IPD025N06NATMA1


This n-channel enhancement MOSFET is a power transistor designed for surface-mounted electronics requiring robust switching and conduction at medium voltage levels. It operates across a wide temperature span and is intended for high-current applications where low conduction losses and moderate gate drive are required. The device is supplied in a TO-252 package suitable for automated assembly on densely populated boards.

Features and Benefits:


• 3.8mΩ Rds(on) reduces conduction losses for higher efficiency
• 90A continuous drain current supports heavy-load switching
• 60V drain-source rating enables medium-voltage designs
• 71nC typical gate charge minimises drive energy requirements
• 167W maximum power dissipation allows elevated power handling
• 20V gate-source limit permits robust gate‑drive margins

Applications


• Suitable for synchronous buck converters in power supplies
• Ideal for motor‑drive half‑bridges in industrial controllers
• Used with battery‑management systems requiring high current
• Can be used for DC‑DC conversion in telecoms equipment
• Appropriate for power stages in server or storage electronics

What temperature range can it withstand during operation?


It is specified to operate from -55°C up to 175°C, accommodating hostile thermal environments.

How is it packaged for assembly and cooling?


The component is supplied in a TO-252 (DPAK) surface‑mount package designed for soldered board mounting and thermal transfer to heatsinking planes.

What gate‑drive considerations should I account for?


The gate-source voltage must not exceed 20V

drive circuits should be sized to deliver the typical 71nC gate charge for desired switching speeds.

How does its channel type affect switching behaviour?


As an N‑channel enhancement device it requires a positive gate voltage to conduct, providing low on‑resistance for efficient high‑current paths.

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