Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 100 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 218-3054
- 製造零件編號:
- IPD90N10S4L06ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD76,750.00
(不含稅)
TWD80,600.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,500 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD30.70 | TWD76,750.00 |
| 12500 + | TWD30.10 | TWD75,250.00 |
* 參考價格
- RS庫存編號:
- 218-3054
- 製造零件編號:
- IPD90N10S4L06ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Maximum Power Dissipation Pd | 136W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Maximum Power Dissipation Pd 136W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.
N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
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