Infineon OptiMOS Type N-Channel MOSFET & Diode, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD90N06S407ATMA2
- RS庫存編號:
- 220-7414
- 製造零件編號:
- IPD90N06S407ATMA2
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 10 件）*
TWD171.00
(不含稅)
TWD179.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,450 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 620 | TWD17.10 | TWD171.00 |
| 630 - 1240 | TWD16.70 | TWD167.00 |
| 1250 + | TWD16.20 | TWD162.00 |
* 參考價格
- RS庫存編號:
- 220-7414
- 製造零件編號:
- IPD90N06S407ATMA2
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 79W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 79W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide range of 55V-60V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages and ranging RDS(on) from 1.5mΩ up to 160mΩ.The new 60V automotive MOSFET family with OptiMOS5 technology delivers more power and leading performance. OptiMOS 5 provides reduced conduction losses optimized for drives and power conversion applications. The smaller leadless packages SSO8 (5x6mm2) and S3O8(3x3mm2) enable space savings by more than 50% compared to the area of a DPAK.
N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
100% Avalanche tested
Ultra low RDSon
world's lowest RDS at 60V (on)
highest current capability
lowest switching and conduction power losses for highest thermal efficiency
robust packages with superior quality and reliability
Optimized total gate charge enables smaller driver output stages
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