Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A, 30 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 220-7415
- 製造零件編號:
- IPD90P03P4L04ATMA2
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD70,250.00
(不含稅)
TWD73,750.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,500 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD28.10 | TWD70,250.00 |
| 5000 + | TWD27.20 | TWD68,000.00 |
* 參考價格
- RS庫存編號:
- 220-7415
- 製造零件編號:
- IPD90P03P4L04ATMA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Maximum Power Dissipation Pd | 137W | |
| Forward Voltage Vf | -1.3V | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Maximum Power Dissipation Pd 137W | ||
Forward Voltage Vf -1.3V | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide portfolio of P-channel automotive power MOSFET in DPAK, D2PAK, TO220, TO262 and SO8 package with the technology of OptiMOS -P2 and Gen5.
P-channel - Logic Level - Enhancement mode
No charge pump required for high side drive.
Simple interface drive circuit
World's lowest RDSon at 40V
Highest current capability
Lowest switching and conduction power losses for highest thermal efficiency
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