Infineon OptiMOS P Type P-Channel Power Transistor, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA1
- RS庫存編號:
- 753-3033
- 製造零件編號:
- IPD90P03P4L04ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD406.00
(不含稅)
TWD426.30
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 10 件從 2026年3月24日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | TWD81.20 | TWD406.00 |
| 625 - 1245 | TWD69.40 | TWD347.00 |
| 1250 + | TWD65.00 | TWD325.00 |
* 參考價格
- RS庫存編號:
- 753-3033
- 製造零件編號:
- IPD90P03P4L04ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS P | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 137W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Standards/Approvals | RoHS | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS P | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 137W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.5mm | ||
Height 2.3mm | ||
Standards/Approvals RoHS | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q | ||
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
相關連結
- Infineon OptiMOS P Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS P Type P-Channel Power Transistor 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS P Type P-Channel Power Transistor 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA1
- Infineon OptiMOS P Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA1
- Infineon OptiMOS Type P-Channel MOSFET & Diode 30 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type P-Channel MOSFET & Diode 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA2
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 IPD042P03L3GATMA1