Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC030P03NS3GAUMA1
- RS庫存編號:
- 906-4309
- 製造零件編號:
- BSC030P03NS3GAUMA1
- 製造商:
- Infineon
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- RS庫存編號:
- 906-4309
- 製造零件編號:
- BSC030P03NS3GAUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TDSON | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TDSON | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC030P03NS3GAUMA1
This MOSFET is a power-switching transistor designed for surface-mount applications requiring high current handling and thermal range. It operates as a P-channel enhancement device for control of power rails and switching stages in demanding environments, offering a balance of switching capability and continuous current capacity across a wide temperature span.
Features and Benefits:
• 100A continuous drain current enables high-load switching
• 125W maximum power dissipation supports heavy-duty thermal loads
• 4.6 mΩ low Rds(on) reduces conduction losses
• 30V maximum Vds allows mid-voltage power rail control
• 140 nC typical gate charge balances drive effort and switching speed
• 25V gate tolerance permits robust gate-drive margins
• 125W maximum power dissipation supports heavy-duty thermal loads
• 4.6 mΩ low Rds(on) reduces conduction losses
• 30V maximum Vds allows mid-voltage power rail control
• 140 nC typical gate charge balances drive effort and switching speed
• 25V gate tolerance permits robust gate-drive margins
Applications
• Suitable for high-current power distribution modules
• Ideal for synchronous rectification in supplies
• Used with battery-management and power-conversion systems
• Can be used for motor-drive low-side switching
• Used for thermally stressed electronics across wide temperatures
• Ideal for synchronous rectification in supplies
• Used with battery-management and power-conversion systems
• Can be used for motor-drive low-side switching
• Used for thermally stressed electronics across wide temperatures
What package type should I plan for on the PCB?
It comes in an 8-pin TDSON surface-mount package that requires a footprint matching an 8-pin thermal pad and surrounding lands for solderability and heat transfer.
How does ambient temperature affect allowable operation?
Rated to operate from -55°C up to 150°C, it maintains functionality across extreme cold and elevated junction conditions though thermal management will determine dynamic current limits.
What gate-drive considerations are important for switching performance?
Expect a typical total gate charge of 140 nC which informs driver sizing
drivers must provide sufficient current to switch within desired transition times while observing the 25V maximum gate-source rating.
What forward-voltage characteristic impacts reverse-conduction?
The device presents a forward voltage of -1.1V during conduction in the relevant direction, which influences conduction losses in freewheeling or synchronous configurations.
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