Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -19.6 A, 60 V Enhancement, 8-Pin PG-TDSON-8 ISC800P06LMATMA1

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs

小計（1 卷，共 5000 件）*

TWD244,000.00

(不含稅)

TWD256,200.00

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 從 2026年12月21日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每卷*
5000 +TWD48.80TWD244,000.00

* 參考價格

RS庫存編號:
285-057
製造零件編號:
ISC800P06LMATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-19.6A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS Power Transistor

Package Type

PG-TDSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

83W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET features an OptiMOS power transistor redefines efficiency with its superior P channel technology designed for high performance applications. Boasting a breakdown voltage of 60V, it is engineered for robust industrial use, ensuring reliable performance under varying operational conditions. The unique SuperSO8 package facilitates an optimal thermal path for heat dissipation, enhancing the reliability and lifespan of the device. This transistor undergoes rigorous testing, including 100% avalanche testing, ensuring that it meets the highest standards of reliability and quality. With an industry leading low on resistance, it significantly reduces power losses, making it an excellent choice for energy conscious designs.

Very low on resistance improves efficiency

100% avalanche tested for reliability

Pb free lead plating for compliance

Halogen free construction supports eco friendliness

Logic level operation for easy interfacing

Suitable for diverse industrial applications

Excellent thermal characteristics ensure reliability

Enhancement mode design for stable performance

相關連結