Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -32 A, 100 V Enhancement, 8-Pin PG-TDSON-8 ISC750P10LMATMA1

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs
暫時無法供應
抱歉，我們不知道何時會到貨。
RS庫存編號:
285-054
製造零件編號:
ISC750P10LMATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-32A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS Power Transistor

Package Type

PG-TDSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

188W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET is a Advanced power MOSFET is designed for optimal efficiency and versatility in industrial applications. Featuring a robust P channel configuration, it delivers exceptionally low on resistance and can handle high drain current, making it suitable for a range of demanding electronic circuits. The incorporation of logic level gate drive means it seamlessly operates within low voltage systems. With its excellent thermal performance and reliable avalanche ratings, this power transistor is Ideal for applications that require durability and reliability under continuous strain. Its RoHS compliance and halogen free lead plating further enhance its suitability for environmentally conscious designs, providing manufacturers peace of mind in a competitive market.

Exceptional switching performance for power management

100% avalanche tested for reliability

Low thermal resistance for effective heat dissipation

Logic level drive for easy microcontroller Interface

Pb free lead plating for environmental compliance

Consistent performance across a wide temperature range

Optimised for high speed applications

Supports high Pulse current ratings

相關連結