Infineon OptiMOS Type N-Channel MOSFET, 1.2 A, 100 V Enhancement, 4-Pin SOT-223 BSP296NH6327XTSA1
- RS庫存編號:
- 826-9260
- Distrelec 貨號:
- 304-44-413
- 製造零件編號:
- BSP296NH6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 50 件）*
TWD1,095.00
(不含稅)
TWD1,150.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 100 件從 2026年8月10日 起發貨
- 加上 850 件從 2026年8月17日 起發貨
- 加上 1,000 件從 2026年9月10日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 200 | TWD21.90 | TWD1,095.00 |
| 250 - 450 | TWD21.30 | TWD1,065.00 |
| 500 + | TWD19.90 | TWD995.00 |
* 參考價格
- RS庫存編號:
- 826-9260
- Distrelec 貨號:
- 304-44-413
- 製造零件編號:
- BSP296NH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Forward Voltage Vf | 0.85V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Forward Voltage Vf 0.85V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 1.2A Maximum Continuous Drain Current - BSP296NH6327XTSA1
This MOSFET is a surface-mount power transistor designed for switching and control in automotive and industrial contexts. It operates as an N‑channel enhancement device suitable for applications requiring moderate current handling and high-voltage capability, while withstanding a broad ambient temperature range for demanding environments.
Features and Benefits:
• 100V drain-source rating enables high-voltage switching
• 1.2A continuous drain current supports modest load currents
• 800 mΩ Rds(on) reduces conduction losses under load
• 4.5 nC typical gate charge allows faster switching transitions
• 1.8W maximum power dissipation manages thermal load in compact assemblies
• ±20V gate tolerance supports common gate-drive voltages
• 1.2A continuous drain current supports modest load currents
• 800 mΩ Rds(on) reduces conduction losses under load
• 4.5 nC typical gate charge allows faster switching transitions
• 1.8W maximum power dissipation manages thermal load in compact assemblies
• ±20V gate tolerance supports common gate-drive voltages
Applications
• Suitable for automotive control modules requiring AEC‑Q101 qualification
• Ideal for DC/DC converter stages in compact power supplies
• Used with low-power motor drivers in auxiliary systems
• Can be used for battery management and power distribution tasks
• Useful in switch‑mode regulation for portable and embedded equipment
• Ideal for DC/DC converter stages in compact power supplies
• Used with low-power motor drivers in auxiliary systems
• Can be used for battery management and power distribution tasks
• Useful in switch‑mode regulation for portable and embedded equipment
What package type should I expect for PCB layout considerations?
It is supplied in a SOT‑223 surface‑mount package with four pins, allowing single‑sided thermal conduction and straightforward through‑board footprint integration.
How does thermal performance behave at elevated temperatures?
The device is rated to operate across a wide range from -55 °C to 150 °C, with power dissipation limited to 1.8W to prevent thermal overstress under continuous operation.
What gate‑drive constraints must be observed during design?
The maximum allowable gate‑source voltage is 20V, so gate drivers should be configured to avoid exceeding this level to protect the gate oxide.
Which parameter most affects switching efficiency in fast PWM applications?
The typical gate charge of 4.5 nC directly influences switching losses and drive‑energy requirements during rapid state changes.
相關連結
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