Infineon OptiMOS Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 4-Pin SOT-223 BSP372NH6327XTSA1
- RS庫存編號:
- 110-7754
- Distrelec 貨號:
- 304-36-977
- 製造零件編號:
- BSP372NH6327XTSA1
- 製造商:
- Infineon
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TWD1,465.00
(不含稅)
TWD1,538.00
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 800 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 200 | TWD29.30 | TWD1,465.00 |
| 250 - 450 | TWD28.50 | TWD1,425.00 |
| 500 + | TWD28.10 | TWD1,405.00 |
* 參考價格
- RS庫存編號:
- 110-7754
- Distrelec 貨號:
- 304-36-977
- 製造零件編號:
- BSP372NH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 270mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.8W | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 270mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.8W | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP372NH6327XTSA1
This MOSFET is a surface‑mount switching transistor designed for use where compact, high‑voltage N‑channel control is required. It operates across a wide temperature range suitable for demanding environments and is intended for applications that need moderate continuous current with efficient switching behaviour.
Features and Benefits:
• 100V drain‑source capability supports high‑voltage circuits
• 270 mΩ low RDS(on) reduces conduction losses
• 1.8A continuous drain current for steady load handling
• 9.5 nC typical gate charge enables fast drive response
• 1.8W power dissipation manages thermal stress in SOT‑223
• 20V maximum gate drive allows flexible gate‑drive design
• 270 mΩ low RDS(on) reduces conduction losses
• 1.8A continuous drain current for steady load handling
• 9.5 nC typical gate charge enables fast drive response
• 1.8W power dissipation manages thermal stress in SOT‑223
• 20V maximum gate drive allows flexible gate‑drive design
Applications
• Suitable for automotive electronic subsystems requiring rugged parts
• Ideal for DC‑DC converters in compact power modules
• Used with motor drivers needing high‑voltage switching
• Can be used for battery management and charging circuits
• Used for general‑purpose switching in industrial control boards
• Ideal for DC‑DC converters in compact power modules
• Used with motor drivers needing high‑voltage switching
• Can be used for battery management and charging circuits
• Used for general‑purpose switching in industrial control boards
What package allows easy soldering and thermal transfer?
The device is supplied in a SOT‑223 surface‑mount package providing a balance of compact footprint and a larger tab for heat dissipation.
How does it cope with extreme ambient conditions?
It is specified to operate from -55 °C up to 150 °C, covering low‑temperature starts and high‑temperature operating scenarios.
What gate voltage limits should designers observe?
The gate‑to‑source voltage must not exceed ±20V to remain within safe operating bounds.
What type of channel and mode does it use?
It utilises an N‑channel enhancement‑mode topology designed for standard switching and control tasks.
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