Infineon OptiMOS -T2 Type N-Channel Power Transistor, 80 A, 60 V Enhancement, 3-Pin TO-263 IPB80N06S4L05ATMA2
- RS庫存編號:
- 826-8998
- 製造零件編號:
- IPB80N06S4L05ATMA2
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD1,350.00
(不含稅)
TWD1,417.60
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 620 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 240 | TWD67.50 | TWD1,350.00 |
| 260 - 480 | TWD65.90 | TWD1,318.00 |
| 500 + | TWD64.80 | TWD1,296.00 |
* 參考價格
- RS庫存編號:
- 826-8998
- 製造零件編號:
- IPB80N06S4L05ATMA2
- 製造商:
- Infineon
規格
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法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | OptiMOS -T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 107W | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 10mm | |
| Height | 4.4mm | |
| Width | 9.25 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series OptiMOS -T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 107W | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 10mm | ||
Height 4.4mm | ||
Width 9.25 mm | ||
Automotive Standard AEC-Q101 | ||
不適用
Infineon OptiMOS™ T2 Power MOSFETs
Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C Peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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