製造零件編號

Vishay SQ Rugged Type P-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252 SQD19P06-60L_GE3

RS庫存編號:: 819-3936
製造零件編號:: SQD19P06-60L_GE3
製造商:: Vishay

Vishay SQ Rugged Type P-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252 SQD19P06-60L_GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 包，共 10 件）*

TWD345.00

(不含稅)

TWD362.20

訂單超過 $1,300.00 免費送貨

有庫存

160 件準備從其他地點送貨
加上 9,970 件從 2026年1月28日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
10 +	TWD34.50	TWD345.00

* 參考價格

RS庫存編號:: 819-3936
製造零件編號:: SQD19P06-60L_GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Series	SQ Rugged
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	46W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	27nC
	Forward Voltage Vf	-1.5V
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Standards/Approvals	No
	Width	6.22 mm
	Height	2.38mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Series SQ Rugged
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 46W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 27nC
	Forward Voltage Vf -1.5V
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Standards/Approvals No
	Width 6.22 mm
	Height 2.38mm
	Automotive Standard AEC-Q101

COO (Country of Origin):: TW

Vishay SQ Rugged Type P-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252 SQD19P06-60L_GE3

訂單超過 $1,300.00 免費送貨

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

相關連結