Vishay SQ Rugged Type N-Channel MOSFET, 40 A, 60 V Enhancement, 3-Pin TO-252 SQD40N06-14L_GE3
- RS庫存編號:
- 787-9484
- 製造零件編號:
- SQD40N06-14L_GE3
- 製造商:
- Vishay
可享批量折扣
小計(1 包,共 5 件)*
TWD305.00
(不含稅)
TWD320.25
(含稅)
添加 25 件 件可免費送貨
最後的 RS 庫存
- 加上 170 件從 2026年2月23日 起發貨
- 最終 1,630 件從 2026年3月02日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 20 | TWD61.00 | TWD305.00 |
| 25 - 95 | TWD59.20 | TWD296.00 |
| 100 - 245 | TWD58.00 | TWD290.00 |
| 250 - 495 | TWD56.60 | TWD283.00 |
| 500 + | TWD55.20 | TWD276.00 |
* 參考價格
- RS庫存編號:
- 787-9484
- 製造零件編號:
- SQD40N06-14L_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.38mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 2.38mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
相關連結
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin TO-252 SQD25N06-22L_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SQD19P06-60L_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 SQD45P03-12_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC SQ4850EY-T1_GE3
