製造零件編號

Vishay Si2367DS Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 3-Pin SOT-23 SI2367DS-T1-GE3

RS庫存編號:: 812-3136
製造零件編號:: SI2367DS-T1-GE3
製造商:: Vishay

Vishay Si2367DS Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 3-Pin SOT-23 SI2367DS-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 組，共 50 件）*

TWD445.00

(不含稅)

TWD467.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 2,600 個，準備發貨

單位	每單位	每膠帶*
50 +	TWD8.90	TWD445.00

* 參考價格

RS庫存編號:: 812-3136
製造零件編號:: SI2367DS-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	3.8A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	Si2367DS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.066Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	9nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	1.7W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Height	1.02mm
	Standards/Approvals	RoHS 2002/95/EC, IEC 61249-2-21
	Width	1.4 mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 3.8A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series Si2367DS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.066Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 9nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 1.7W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Height 1.02mm
	Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21
	Width 1.4 mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Si2367DS Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 3-Pin SOT-23 SI2367DS-T1-GE3

訂單超過 $1,300.00 免費送貨

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

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