Vishay Si2309CDS Type P-Channel MOSFET, 1.2 A, -60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3
- RS庫存編號:
- 710-3250
- 製造零件編號:
- SI2309CDS-T1-GE3
- 製造商:
- Vishay
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TWD174.00
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TWD182.70
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 30 件從 2026年8月10日 起發貨
- 加上 13,380 件從 2026年8月17日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD17.40 | TWD174.00 |
| 750 - 1490 | TWD17.10 | TWD171.00 |
| 1500 + | TWD16.60 | TWD166.00 |
* 參考價格
- RS庫存編號:
- 710-3250
- 製造零件編號:
- SI2309CDS-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Package Type | SOT-23 | |
| Series | Si2309CDS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 345mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Width | 1.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds -60V | ||
Package Type SOT-23 | ||
Series Si2309CDS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 345mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.02mm | ||
Width 1.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Si2309CDS Series MOSFET, -60V Drain Source Voltage, 1.2A Continuous Drain Current - SI2309CDS-T1-GE3
This p-channel MOSFET is a compact surface-mount transistor designed for switching and load-control tasks in small-footprint electronics. It operates as an enhancement-mode device suitable for low- to moderate-current applications where a P-channel topology is required. The package and materials support routine board-level assembly and use across a wide ambient temperature span.
Features and Benefits:
• Low on-resistance 345mΩ reduces conduction losses
• 60V drain rating enables higher-voltage switching
• Continuous drain current 1.2A supports modest load currents
• Gate charge 2.7nC allows faster switching transitions
• Power dissipation 1.7W manages thermal load under normal use
• 60V drain rating enables higher-voltage switching
• Continuous drain current 1.2A supports modest load currents
• Gate charge 2.7nC allows faster switching transitions
• Power dissipation 1.7W manages thermal load under normal use
Applications
• Suitable for handheld device high-side switching
• Ideal for battery protection and reverse-current blocking
• Used with power-management circuits in consumer electronics
• Can be used for signal-level load switching in control boards
• Ideal for battery protection and reverse-current blocking
• Used with power-management circuits in consumer electronics
• Can be used for signal-level load switching in control boards
What temperature range can it tolerate during operation?
It is specified to function between -55°C and 150°C, covering common industrial and consumer thermal environments.
How many pins and what mounting style does it use?
It has three terminals and is supplied in a surface-mount SOT-23 package for automated assembly.
What gate voltage limits should be observed in a design?
The gate-source voltage must not exceed ±20V to avoid damage to the gate oxide.
Are there any restrictions on automotive use?
It is not classified as an automotive-grade device, so designs requiring automotive approval should consider alternative qualified components.
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