Vishay Si2309CDS Type P-Channel MOSFET, 1.2 A, -60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3
- RS庫存編號:
- 710-3250
- 製造零件編號:
- SI2309CDS-T1-GE3
- 製造商:
- Vishay
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TWD157.00
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TWD164.80
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD15.70 | TWD157.00 |
| 750 - 1490 | TWD15.40 | TWD154.00 |
| 1500 + | TWD15.00 | TWD150.00 |
* 參考價格
- RS庫存編號:
- 710-3250
- 製造零件編號:
- SI2309CDS-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Package Type | SOT-23 | |
| Series | Si2309CDS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 345mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.7W | |
| Typical Gate Charge Qg @ Vgs | 2.7nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Standards/Approvals | RoHS | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds -60V | ||
Package Type SOT-23 | ||
Series Si2309CDS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 345mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.7W | ||
Typical Gate Charge Qg @ Vgs 2.7nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Standards/Approvals RoHS | ||
Width 1.4mm | ||
Automotive Standard No | ||
Vishay Si2309CDS Series MOSFET, -60V Drain Source Voltage, 1.2A Continuous Drain Current - SI2309CDS-T1-GE3
This p‑channel MOSFET is a surface‑mount transistor designed for switching and control tasks in Compact electronic assemblies. It operates as an enhancement‑mode device suitable for low‑ to medium‑current circuits, offering a balance of voltage handling and thermal endurance for industrial applications.
Features and Benefits:
• -60V maximum Vds for high‑voltage switching capability • 1.2A continuous drain current for moderate load handling • 345mΩ Rds(on) for predictable conduction losses • 2.7nC typical gate charge for efficient gate drive • 1.7W power dissipation supporting thermal‑budget planning • -55°C to 150°C operating range for wide‑temperature environments
Applications
• Suitable for load switching in automation control modules • Ideal for power‑rail reverse‑polarity protection circuits • Used with battery management and power distribution boards • Can be used for level‑shifting and small‑signal power stages
What package type is used for Compact board layouts?
It is supplied in a SOT‑23 package configured for three‑pin surface mounting, facilitating dense PCB assembly.
How does the device handle gate drive requirements?
The gate may be driven within a ±20V range relative to source, allowing compatibility with common control voltages while limiting gate stress.
What thermal considerations should I allow for in design?
With maximum power dissipation of 1.7W, board copper and thermal vias should be sized to manage junction temperature under load within the -55°C to 150°C specified range.
Are there environmental or material restrictions to note?
The component conforms to RoHS requirements, indicating restricted hazardous substances are controlled in its manufacture.
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