Vishay Si2309CDS Type P-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3
- RS庫存編號:
- 710-3250
- 製造零件編號:
- SI2309CDS-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD157.00
(不含稅)
TWD164.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 90 件準備從其他地點送貨
- 加上 13,690 件從 2026年4月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD15.70 | TWD157.00 |
| 750 - 1490 | TWD15.40 | TWD154.00 |
| 1500 + | TWD15.00 | TWD150.00 |
* 參考價格
- RS庫存編號:
- 710-3250
- 製造零件編號:
- SI2309CDS-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | Si2309CDS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 345mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.7nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series Si2309CDS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 345mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.7nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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