製造零件編號

Toshiba TK N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1

RS庫存編號:: 796-5068
製造零件編號:: TK100E06N1
製造商:: Toshiba

Toshiba TK N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 件）*

TWD53.00

(不含稅)

TWD55.65

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 16 個，準備發貨

單位	每單位
1 - 9	TWD53.00
10 - 49	TWD52.00
50 - 349	TWD51.00
350 - 699	TWD50.00
700 +	TWD49.00

* 參考價格

RS庫存編號:: 796-5068
製造零件編號:: TK100E06N1
製造商:: Toshiba

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Toshiba
	Channel Type	N
	Maximum Continuous Drain Current	263 A
	Maximum Drain Source Voltage	60 V
	Package Type	TO-220
	Series	TK
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	2.3 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Maximum Power Dissipation	255 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	140 nC @ 10 V
	Length	10.16mm
	Width	4.45mm
	Height	15.1mm

	選取全部
	品牌 Toshiba
	Channel Type N
	Maximum Continuous Drain Current 263 A
	Maximum Drain Source Voltage 60 V
	Package Type TO-220
	Series TK
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 2.3 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Maximum Power Dissipation 255 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 140 nC @ 10 V
	Length 10.16mm
	Width 4.45mm
	Height 15.1mm

MOSFET Transistors, Toshiba

Toshiba TK N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1

訂單超過 $1,300.00 免費送貨

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