Toshiba TK N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1
- RS庫存編號:
- 796-5068
- 製造零件編號:
- TK100E06N1
- 製造商:
- Toshiba
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- RS庫存編號:
- 796-5068
- 製造零件編號:
- TK100E06N1
- 製造商:
- Toshiba
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 263 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | TK | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 255 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.16mm | |
| Typical Gate Charge @ Vgs | 140 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.45mm | |
| Height | 15.1mm | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 263 A | ||
Maximum Drain Source Voltage 60 V | ||
Series TK | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 255 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.16mm | ||
Typical Gate Charge @ Vgs 140 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.45mm | ||
Height 15.1mm | ||
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