Vishay SQ Rugged Type N-Channel MOSFET, 32 A, 40 V Enhancement, 5-Pin SO-8 SQJ412EP-T1_GE3

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  • 2026年6月17日 發貨
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包裝方式:
RS庫存編號:
787-9496
製造零件編號:
SQJ412EP-T1_GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

32A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

SQ Rugged

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

83W

Forward Voltage Vf

0.8V

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

5mm

Width

5.03 mm

Height

1.14mm

Automotive Standard

AEC-Q101

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified

• Junction temperature up to +175°C

• Low on-resistance n- and p-channel TrenchFET® technologies

• Innovative space-saving package options

MOSFET Transistors, Vishay Semiconductor


Approvals

AEC-Q101

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