Vishay SQ Rugged Type N-Channel MOSFET, 32 A, 40 V Enhancement, 5-Pin SO-8 SQJ412EP-T1_GE3
- RS庫存編號:
- 787-9496
- 製造零件編號:
- SQJ412EP-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
小計(1 包,共 5 件)*
TWD423.00
(不含稅)
TWD444.15
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月17日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 + | TWD84.60 | TWD423.00 |
* 參考價格
- RS庫存編號:
- 787-9496
- 製造零件編號:
- SQJ412EP-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 5.03 mm | |
| Height | 1.14mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 5.03 mm | ||
Height 1.14mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
相關連結
- Vishay SQ Rugged Type N-Channel MOSFET 40 V Enhancement, 5-Pin SO-8
- Vishay SQ Rugged Type P-Channel MOSFET 40 V Enhancement, 8-Pin SOIC SQ4401EY-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 20 V Enhancement, 6-Pin TSOP SQ3460EV-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC SQ4431EY-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC SQ4850EY-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 40 V Enhancement, 6-Pin TSOP-6 SQ3419EV-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 20 V Enhancement, 6-Pin TSOP
- Vishay SQ Rugged Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
