製造零件編號

Vishay SQ Rugged Type P-Channel MOSFET, 6.2 A, 30 V Enhancement, 8-Pin SOIC

RS庫存編號:: 165-6285
製造零件編號:: SQ4431EY-T1_GE3
製造商:: Vishay

Vishay SQ Rugged Type P-Channel MOSFET, 6.2 A, 30 V Enhancement, 8-Pin SOIC

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2500 件）*

TWD34,750.00

(不含稅)

TWD36,500.00

訂單超過 $1,300.00 免費送貨

庫存資訊目前無法查詢

單位	每單位	每卷*
2500 - 10000	TWD13.90	TWD34,750.00
12500 +	TWD13.60	TWD34,000.00

* 參考價格

RS庫存編號:: 165-6285
製造零件編號:: SQ4431EY-T1_GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6.2A
	Maximum Drain Source Voltage Vds	30V
	Series	SQ Rugged
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	52mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	6W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	25nC
	Forward Voltage Vf	-1.1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	5mm
	Height	1.55mm
	Width	4 mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6.2A
	Maximum Drain Source Voltage Vds 30V
	Series SQ Rugged
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 52mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 6W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 25nC
	Forward Voltage Vf -1.1V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 5mm
	Height 1.55mm
	Width 4 mm
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Vishay SQ Rugged Type P-Channel MOSFET, 6.2 A, 30 V Enhancement, 8-Pin SOIC

訂單超過 $1,300.00 免費送貨

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