製造零件編號

Vishay SQ Rugged Type N-Channel MOSFET, 8 A, 20 V Enhancement, 6-Pin TSOP

RS庫存編號:: 170-8298
製造零件編號:: SQ3460EV-T1_GE3
製造商:: Vishay

Vishay SQ Rugged Type N-Channel MOSFET, 8 A, 20 V Enhancement, 6-Pin TSOP

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD35,700.00

(不含稅)

TWD37,500.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月17日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 3000	TWD11.90	TWD35,700.00
6000 - 9000	TWD11.60	TWD34,800.00
12000 +	TWD11.20	TWD33,600.00

* 參考價格

RS庫存編號:: 170-8298
製造零件編號:: SQ3460EV-T1_GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	20V
	Package Type	TSOP
	Series	SQ Rugged
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	53mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	3.6W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	9.3nC
	Forward Voltage Vf	0.77V
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Operating Temperature	175°C
	Length	3.1mm
	Standards/Approvals	No
	Width	1.7 mm
	Height	1mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 20V
	Package Type TSOP
	Series SQ Rugged
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 53mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 3.6W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 9.3nC
	Forward Voltage Vf 0.77V
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Operating Temperature 175°C
	Length 3.1mm
	Standards/Approvals No
	Width 1.7 mm
	Height 1mm
	Automotive Standard AEC-Q101

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor

The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs

• AEC-Q101 qualified

• Junction temperature up to +175°C

• Low on-resistance n- and p-channel TrenchFET® technologies

• Innovative space-saving package options

MOSFET Transistors, Vishay Semiconductor

Approvals

AEC-Q101