Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220 IRF3205ZPBF
- RS庫存編號:
- 688-6829
- 製造零件編號:
- IRF3205ZPBF
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 2 件)*
TWD50.00
(不含稅)
TWD52.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 126 件準備從其他地點送貨
- 加上 634 件從 2026年1月07日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 12 | TWD25.00 | TWD50.00 |
| 14 - 68 | TWD23.00 | TWD46.00 |
| 70 + | TWD22.00 | TWD44.00 |
* 參考價格
- RS庫存編號:
- 688-6829
- 製造零件編號:
- IRF3205ZPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 8.77mm | |
| Length | 10.54mm | |
| Width | 4.69 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 8.77mm | ||
Length 10.54mm | ||
Width 4.69 mm | ||
Automotive Standard No | ||
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