Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-247

RS庫存編號:: 919-4808
製造零件編號:: IRFP064NPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-247

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小計（1 管，共 25 件）*

TWD1,275.00

(不含稅)

TWD1,338.75

訂單超過 $1,300.00 免費送貨

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單位	每單位	每管*
25 - 25	TWD51.00	TWD1,275.00
50 - 75	TWD49.90	TWD1,247.50
100 +	TWD46.40	TWD1,160.00

* 參考價格

RS庫存編號:: 919-4808
製造零件編號:: IRFP064NPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	110A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	8mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	200W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	170nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	15.9mm
	Standards/Approvals	No
	Width	5.3 mm
	Height	20.3mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 110A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 8mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 200W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 170nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 15.9mm
	Standards/Approvals No
	Width 5.3 mm
	Height 20.3mm
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 110A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRFP064NPBF

This MOSFET represents a high-performance electronic component designed for efficient power management. It can handle a continuous drain current of 110A and a maximum drain-source voltage of 55V, making it suitable for use in automation, electronics, and electrical industries. The enhancement mode design ensures optimal performance under various conditions, highlighting its role in contemporary electronic systems.

Features & Benefits

• Low on-resistance of 8mΩ enhances efficiency

• Maximum power dissipation of 200W ensures robust operation

• Capable of withstanding operating temperatures up to +175°C

• Versatile, compatible with both negative and positive gate-source voltages

• Single transistor configuration supports a variety of applications

Applications

• Used in power supply circuits that require high efficiency

• Common in motor control systems for automation

• Appropriate for telecommunications equipment

• Effective in power conversion systems in industrial environments

What is the maximum power dissipation for this component?

The maximum power dissipation is 200W, which supports robust performance across diverse applications.

Can it operate in high-temperature environments?

Yes, it is capable of functioning effectively at temperatures up to +175°C, making it suitable for challenging conditions.

What type of gate voltage is required for operation?

This device operates with a maximum gate-source voltage range of -20V to +20V, allowing for flexible control options.

How does the channel type influence its performance?

The N-channel type is beneficial for applications needing efficient switching and high current handling.

Is it suitable for through-hole design integrations?

Yes, it has a TO-247AC package with a through-hole mounting type, making installation straightforward in various setups.