Infineon HEXFET Type N-Channel MOSFET, 81 A, 55 V Enhancement, 3-Pin TO-247

RS庫存編號:: 919-4892
製造零件編號:: IRFP054NPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 81 A, 55 V Enhancement, 3-Pin TO-247

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 25 件）*

TWD1,132.50

(不含稅)

TWD1,189.00

訂單超過 $1,300.00 免費送貨

有庫存

25 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
25 - 25	TWD45.30	TWD1,132.50
50 - 75	TWD44.30	TWD1,107.50
100 +	TWD43.00	TWD1,075.00

* 參考價格

RS庫存編號:: 919-4892
製造零件編號:: IRFP054NPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	81A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	12mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	130nC
	Maximum Power Dissipation Pd	170W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Width	5.3 mm
	Height	20.3mm
	Length	15.9mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 81A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 12mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 130nC
	Maximum Power Dissipation Pd 170W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Width 5.3 mm
	Height 20.3mm
	Length 15.9mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 81A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRFP054NPBF

This MOSFET provides a robust solution for high-speed performance and efficient power management. With its N-channel configuration, the device ensures dependable operation across various electronic circuits. It accommodates continuous drain currents up to 81A and has a voltage rating of 55V, making it a notable choice for professionals in the automation, electronics, and mechanical sectors.

Features & Benefits

• Maximum continuous drain current of 81A supports high-performance applications

• Low on-resistance of 12mΩ contributes to improved efficiency

• Wide gate threshold voltage range allows for versatile circuit designs

• High power dissipation capability of 170W ensures long-lasting operation

• Compact TO-247AC package simplifies installation

Applications

• Used in power conversion and motor control systems

• Integral to power supply and amplifier circuits

• Applicable in renewable energy systems for efficient switching

• Suitable for automotive , enhancing performance resilience

What is the maximum power dissipation capability of this device?

The maximum power dissipation is rated at 170W, allowing it to manage substantial loads effectively.

How does the gate threshold voltage affect operation?

The gate threshold voltage ranges from 2V to 4V, which enables compatibility with various circuit designs and ensures efficient operation within specified parameters.

Can this MOSFET be used in high-temperature environments?

Yes, it operates within a temperature range of -55°C to +175°C, making it suitable for challenging thermal conditions.

What are the benefits of using a low RDS(on)?

A low RDS(on) of 12mΩ reduces heat generation and enhances efficiency, critical for high-performance applications.

Is it easy to install in existing electronic systems?

The TO-247AC package type is designed for through-hole mounting, making it straightforward to install in various applications.