Infineon HEXFET Type N-Channel MOSFET, 81 A, 20 V Enhancement, 2-Pin DirectFET IRF6636TRPBF
- RS庫存編號:
- 222-4739
- 製造零件編號:
- IRF6636TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD489.00
(不含稅)
TWD513.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月05日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD48.90 | TWD489.00 |
| 20 - 90 | TWD47.50 | TWD475.00 |
| 100 - 240 | TWD46.40 | TWD464.00 |
| 250 - 490 | TWD45.10 | TWD451.00 |
| 500 + | TWD41.80 | TWD418.00 |
* 參考價格
- RS庫存編號:
- 222-4739
- 製造零件編號:
- IRF6636TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 81A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 6.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 42W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 1V | |
| Width | 3.95 mm | |
| Height | 0.68mm | |
| Standards/Approvals | No | |
| Length | 4.85mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 81A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 6.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 42W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 1V | ||
Width 3.95 mm | ||
Height 0.68mm | ||
Standards/Approvals No | ||
Length 4.85mm | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
100% Rg tested Low Conduction and Switching Losses
Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters
相關連結
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 2-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 7-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 7-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 80 V Enhancement, 7-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 9-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 6-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 2-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 9-Pin DirectFET