Infineon HEXFET Type N-Channel MOSFET, 55 A, 80 V Enhancement, 7-Pin DirectFET
- RS庫存編號:
- 215-2577
- 製造零件編號:
- IRF6668TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 4800 件）*
TWD140,640.00
(不含稅)
TWD147,648.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年4月08日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 4800 - 19200 | TWD29.30 | TWD140,640.00 |
| 24000 + | TWD28.40 | TWD136,320.00 |
* 參考價格
- RS庫存編號:
- 215-2577
- 製造零件編號:
- IRF6668TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HEXFET | |
| Package Type | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HEXFET | ||
Package Type DirectFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET® Power MOSFET has 80V maximum drain source voltage in a DirectFET MZ package rated at 55 amperes optimized with low on resistance. The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
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