Infineon DirectFET, HEXFET Type N-Channel MOSFET, 375 A, 60 V Enhancement, 15-Pin DirectFET IRF7749L1TRPBF

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包裝方式：
RS庫存編號:
907-5205
製造零件編號:
IRF7749L1TRPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

375A

Maximum Drain Source Voltage Vds

60V

Package Type

DirectFET

Series

DirectFET, HEXFET

Mount Type

Surface

Pin Count

15

Maximum Drain Source Resistance Rds

1.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

200nC

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

7.1 mm

Height

0.49mm

Standards/Approvals

No

Length

9.15mm

Automotive Standard

No

DirectFET® Power MOSFET, Infineon


The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in Advanced switching applications.

Industry lowest on-resistance in their respective footprints

Extremely low package resistance to minimise conduction losses

Highly efficient dual-sided cooling significantly improves power density, cost and reliability

Low profile of only 0.7mm

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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