Infineon DirectFET, HEXFET Type N-Channel MOSFET, 86 A, 60 V Enhancement, 4-Pin MN

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RS庫存編號:
168-5958
製造零件編號:
IRF6648TRPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

60V

Series

DirectFET, HEXFET

Package Type

MN

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

89W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.35mm

Standards/Approvals

No

Width

5.05 mm

Height

0.5mm

Automotive Standard

No

COO (Country of Origin):
CN

DirectFET® Power MOSFET, Infineon


The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in Advanced switching applications.

Industry lowest on-resistance in their respective footprints

Extremely low package resistance to minimise conduction losses

Highly efficient dual-sided cooling significantly improves power density, cost and reliability

Low profile of only 0.7mm

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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